Product details

product description 

3BHE048062R0101 is IGCT MODULE

Insulated gate bipolar transistor is a device composed of MOSFET and bipolar transistor, the input is extremely MOSFET, the output is extremely PNP transistor, it combines the advantages of these two devices, both has the advantages of small MOSFET device drive power and fast switching speed, but also has the advantages of bipolar device saturation voltage reduction and large capacity. Its frequency characteristics are between MOSFET and power transistor, and it can work normally in the frequency range of tens of kHz, which has been more and more widely used in modern power electronics technology, and occupies a dominant position in large and medium power applications at higher frequencies.

Product Parameter

Model Number:3BHE048062R0101

Origin:USA

IGBT principle and equivalent circuit

The opening and closing of the IGBT tube are controlled by the grid voltage, and the equivalent 

circuit of the IGBT tube is shown in Figure 1. As can be seen from Figure 1, when the grid is 

applied with positive voltage. A channel is formed in the MOSFET and provides base current to 

the PNP transistor, so that the IGBT tube is on, and the IGBT tube with high voltage resistance 

also has a low on-state voltage drop. When a negative voltage is added to the gate, the channel 

in the MOSFET disappears, the base current of the PNP transistor is cut off, and the IGBT tube is 

turned off. The IGBT tube is also a voltage-controlled device like M()SFET, which applies a DC 

voltage of ten volts between its gate and emission electrode. Only microampere-level leakage 

current, basically no power consumption, showing the advantages of large input impedance. 

There is still no unified drawing method for IGBT circuit symbols

If a positive driving voltage is added between the gate and the emitter of the IGBT, the 

MOSFET is switched on, so that the PNP transistor is in a low resistance state between the 

collector and the base and the transistor is switched on; If the voltage between the gate and 

emitter of 1GBT is 0V, the MOS cut-off cuts off the supply of base current to the PNP transistor,

 making the transistor cut-off. IGBT and MOSFET is also a voltage control device, in its gate a 

transmitter between the application of more than ten volts of DC voltage, only μA level of 

leakage current flow, basically no power consumption.

major parameter

(1) Maximum emitter voltage between electrodes

This parameter determines the maximum operating voltage of the device, which is determined by the breakdown voltage that the internal PNP transistor can withstand.

(2) Maximum collector current

The maximum collector current includes the rated DC current and the maximum pulse width current at a certain shell temperature. The nominal current of different manufacturers' products is usually the rated DC current at the shell temperature of 25 ° C or 80 ° C. This parameter is closely related to the shell temperature of IGBT, and because the shell temperature of the device is generally higher during actual operation, it must be paid attention to when selecting.

(3) Maximum collector power consumption

The maximum power consumption allowed by IGBT at a certain shell temperature, which will decrease as the shell temperature rises.

(4) Emitter saturation pressure drop

When a certain voltage is applied between the gate and the collector, the saturation on-state voltage drop between the gate and the collector is obtained at a certain junction temperature and collector current. This voltage drop has a negative temperature coefficient when the collector current is small, and a positive temperature coefficient when the current is large, which makes it easier for IGBTs to operate in parallel.

(5) grid voltage

Similar to MOSFETs, UGE>20V will cause breakdown of the insulation layer. Therefore, attention must be paid to welding and driving.

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