Product details

• ABB Type Designation:
• 1150A 4200V
  
• Catalog Description:
• Phase Control Thyristor, PCT
• Country of Origin:
• Switzerland (CH)
• Gross Volume:
• 0.146 dm³
  
• Gross Weight:
• 0.6 kg
  
• Invoice Description:
• Phase Control Thyristor, PCT
  
• Made To Order:
• No
  
• Medium Description:
• THYRISTOR
  
• Minimum Order Quantity:
• 1 piece
  
• Order Multiple:
• 1 piece
  
• Package Level 1 Depth / Length:
• 75 mm
  
• Package Level 1 Gross Weight:
• 0.6 kg
  
• Package Level 1 Height:
• 26 mm
  
• Package Level 1 Units:
• 1 piece
  
• Package Level 1 Width:
• 75 mm

TYPICAL APPLICATIONSDC 

motor controls

Controlled DC power supplies

AC controllers

Phase control and zero-cross triggering of thyristors 

1. Phase shift triggering of thyristors can change the phase Angle of conduction and control the output through thyristors (voltage, current, power, all can be used).

2. The zero-crossing macro crack trigger mode can reduce the impact electrical accompany current at the moment of triggering turbulence, but can not control the output size of each half wave, so it is not suitable for continuous control of the output system, generally used for controlled heating and temperature regulation.

High snubberless turn-off rating

Optimized for medium frequency (<l kHz) and low turn-off losses

High reliability

High electromagnetic immunity

Simple control interface with status feedbackAC or DC supply voltage

Applying IGCT Gate Units

pplying IGCTs

Recommendations regarding mechanical clamping of Press Pack High Power Semiconductors

Failure rates of IGCTs due to cosmic rays

Field measurements on High Power Press Pack Semiconductors

Voltage ratings of high power semiconductors

The expansion of power electronics into the new fields of Energy Management and Co-generation is driving semiconductor requirements towards higher frequency, higher voltage and higher efficiency while increasing reliability and lowering costs. The IGCT offers the potential for still higher currents, voltages and frequencies without series or parallel connection and such future devices are under serious consideration amongst leading semiconductor and equipment manufacturers for medium voltage conversion at line voltages up to 7.2 kVRMS. Series connection for very high voltage will benefit from ”autogenous power supplies” which, combined with active clamping, will eventually eliminate the need for external power supplies and sharing snubbers. Ultimately, the IGCT will become a two-terminal module with a single fiberoptic communication link. The use of Diamond-Like Carbon (an inorganic passivation technology now used on all ABB IGCTs) is driving junction temperatures from historically 115 to currently 125 to ultimately 140°C (on selected types). In combination with improved thermal resistances (reduced by 30% on recent devices), the power and frequency capability of these latest switches will remain unequalled for the foreseeable future.

Voltammetry characteristics of thyristors:Definition: The relationship between the voltage U between the anode and cathode of the thyristor and the anode current 1 is called the voltammetry characteristic of the thyristor.The first quadrant is the forward characteristic, and the third quadrant is the reverse characteristic.

ABB series of products