Product details

• ABB-typebetegnelse:
• 4500V 3600A
  
• Katalogbeskrivelse:
• Asymmetric Thyristor IGCT

• Opprinnelsesland:
• Switzerland (CH)
• Bruttovolum:
• 3.114 dm³
  
• Bruttovekt:
• 2.9 kg
  
• Fakturabeskrivelse:
• Asymmetric Thyristor IGCT
  
• Laget på bestilling:
• No
  
• Middels beskrivelse:
• IGCT, Asymmetric
  
• Minimum ordreantall:
• 1 piece
  
• Bestill flere:
• 1 piece
  
• Pakkenivå 1 dybde/lengde:
• 439 mm
  
• Pakkenivå 1 bruttovekt:
• 2.9 kg
  
• Pakkenivå 1 høyde:
• 41 mm
  
• Pakkenivå 1 enheter:
• 1 piece
  
• Pakkenivå 1 bredde:
• 173 mm

Thyristor is short for thyristor rectifier element, which is a high-power semiconductor device with four layers of structure and three PN junctions, generally composed of two thyristors connected in reverse. Its function is not only rectification, but also can be used as a contactless switch to quickly turn on or off the circuit, to achieve the inverter of direct current into alternating current, alternating current of one frequency into alternating current of another frequency, and so on.

Thyristor, like other semiconductor devices, has the advantages of small size, high efficiency, good stability and reliable operation. Its emergence has enabled semiconductor technology to enter the field of strong electricity from the field of weak current, and has become a component used in industry, agriculture, transportation, military scientific research, as well as commercial and civilian electrical appliances.

High snubberless turn-off rating

Optimized for medium frequency (<l kHz) and low turn-off losses

High reliability

High electromagnetic immunity

Simple control interface with status feedbackAC or DC supply voltage

Applying IGCT Gate Units

pplying IGCTs

Recommendations regarding mechanical clamping of Press Pack High Power Semiconductors

Failure rates of IGCTs due to cosmic rays

Field measurements on High Power Press Pack Semiconductors

Voltage ratings of high power semiconductors

The expansion of power electronics into the new fields of Energy Management and Co-generation is driving semiconductor requirements towards higher frequency, higher voltage and higher efficiency while increasing reliability and lowering costs. The IGCT offers the potential for still higher currents, voltages and frequencies without series or parallel connection and such future devices are under serious consideration amongst leading semiconductor and equipment manufacturers for medium voltage conversion at line voltages up to 7.2 kVRMS. Series connection for very high voltage will benefit from ”autogenous power supplies” which, combined with active clamping, will eventually eliminate the need for external power supplies and sharing snubbers. Ultimately, the IGCT will become a two-terminal module with a single fiberoptic communication link. The use of Diamond-Like Carbon (an inorganic passivation technology now used on all ABB IGCTs) is driving junction temperatures from historically 115 to currently 125 to ultimately 140°C (on selected types). In combination with improved thermal resistances (reduced by 30% on recent devices), the power and frequency capability of these latest switches will remain unequalled for the foreseeable future.

Voltammetry characteristics of thyristors:Definition: The relationship between the voltage U between the anode and cathode of the thyristor and the anode current 1 is called the voltammetry characteristic of the thyristor.The first quadrant is the forward characteristic, and the third quadrant is the reverse characteristic.

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