Product details

• ABB Type Designation:
• 4500V 4000A
  
• Catalog Description:
• Asymmetric Thyristor IGCT
• Country of Origin:
• Switzerland (CH)
• Gross Volume:
• 3.114 dm³
  
• Gross Weight:
• 2.9 kg
  
• Invoice Description:
• Asymmetric Thyristor IGCT
  
• Made To Order:
• No
  
• Medium Description:
• Asymmetric Integrated Gate-Commutated Thyristor
  
• Minimum Order Quantity:
• 1 piece
  
• Order Multiple:
• 1 piece
  
• Package Level 1 Depth / Length:
• 439 mm
  
• Package Level 1 Gross Weight:
• 2.9 kg
  
• Package Level 1 Height:
• 41 mm
  
• Package Level 1 Units:
• 1 piece
  
• Package Level 1 Width:
• 173 mm

5SYA 2031Applying IGCT Gate Units

5SYA 2032Applying IGCTs

5SYA 2036Recommendations regarding mechanical clamping of Press Pack High Power Semiconductors

5SYA 2046Failure rates of IGCTs due to cosmic rays

5SYA 2048Field measurements on High Power Press Pack Semiconductors

5SYA 2051Voltage ratings of high power semiconductors

The expansion of power electronics into the new fields of Energy Management and Co-generation is driving semiconductor requirements towards higher frequency, higher voltage and higher efficiency while increasing reliability and lowering costs. The IGCT offers the potential for still higher currents, voltages and frequencies without series or parallel connection and such future devices are under serious consideration amongst leading semiconductor and equipment manufacturers for medium voltage conversion at line voltages up to 7.2 kVRMS. Series connection for very high voltage will benefit from ”autogenous power supplies” which, combined with active clamping, will eventually eliminate the need for external power supplies and sharing snubbers. Ultimately, the IGCT will become a two-terminal module with a single fiberoptic communication link. The use of Diamond-Like Carbon (an inorganic passivation technology now used on all ABB IGCTs) is driving junction temperatures from historically 115 to currently 125 to ultimately 140°C (on selected types). In combination with improved thermal resistances (reduced by 30% on recent devices), the power and frequency capability of these latest switches will remain unequalled for the foreseeable future.

Voltammetry characteristics of thyristors:Definition: The relationship between the voltage U between the anode and cathode of the thyristor and the anode current 1 is called the voltammetry characteristic of the thyristor.The first quadrant is the forward characteristic, and the third quadrant is the reverse characteristic.

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