Product details

IGCT Integrated Gate Commutated Thyristors (IGCT) is a new type of power semiconductor switching device (Integrated Gate Commutated Thyristors = gate commutated thyristors + gate units) developed by medium voltage converters for use in large power electronics packages. IGCT has made great progress in power, reliability, switching speed, efficiency, cost, weight and volume, and has brought a new leap to power electronic complete sets.

IGCT integrates the GTO chip with the anti-parallel diode and gate drive circuit, and then connects it with the gate driver in a low inductance mode at the periphery, combining the stable turn-off ability of the transistor and the advantages of the low on-state loss of the thyristor, and gives play to the performance of the thyristor in the on-stage, and presents the characteristics of the transistor in the off-stage. IGCT has the characteristics of large current, high blocking voltage, high switching frequency, high reliability, compact structure, low on-off loss, low cost, high yield, and has a good application prospect. IGCT has been used in power system grid devices (100MVA) and medium power industrial drive devices (5MW)IGCT has been successfully applied in the field of medium voltage inverter for 11 years (until 2009), because the high-speed switching capability of IGCT does not need buffer circuits, so the number of power components required is less, and the reliability of operation is greatly increased.

The IGCT combines the high-speed switching characteristics of the IGBT(insulated gate bipolar transistor) with the high blocking voltage and low on-loss characteristics of the GTO(gate off thyristor), and the trigger signal is generally transmitted to the IGCT unit through the optical fiber. In the phase module of the ACS6000 active rectifier unit, each phase module consists of an IGCT and a continuing diode, a clamp capacitor, and a damping resistor, and is powered by an independent gate power supply unit GUSP.

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